Infineon N-Channel MOSFET, 102 A, 30 V PG-TSDSON-8-FL BSZ0902NSIATMA1

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Subtotal (1 pack of 5 units)*

£4.89

(exc. VAT)

£5.87

(inc. VAT)

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Per unit
Per Pack*
5 - 45£0.978£4.89
50 - 120£0.782£3.91
125 - 245£0.734£3.67
250 - 495£0.684£3.42
500 +£0.358£1.79

*price indicative

Packaging Options:
RS Stock No.:
259-1484
Mfr. Part No.:
BSZ0902NSIATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

102 A

Maximum Drain Source Voltage

30 V

Package Type

PG-TSDSON-8-FL

Mounting Type

Surface Mount

The Infineon power MOSFET has ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. It is tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life.

Ultra low gate and output charge
Lowest on-state resistance in small footprint packages
Easy to design in
Increased battery lifetime
Improved EMI behaviour making external snubber networks obsolete
Saving costs
Saving space
Reducing power losses

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Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
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