Infineon N-Channel MOSFET, 205 A PG-TSON IQE013N04LM6ATMA1
- RS Stock No.:
- 258-3921
- Mfr. Part No.:
- IQE013N04LM6ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£3.76
(exc. VAT)
£4.52
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,854 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.88 | £3.76 |
| 20 - 48 | £1.56 | £3.12 |
| 50 - 98 | £1.465 | £2.93 |
| 100 - 198 | £1.355 | £2.71 |
| 200 + | £1.26 | £2.52 |
*price indicative
- RS Stock No.:
- 258-3921
- Mfr. Part No.:
- IQE013N04LM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 205 A | |
| Package Type | PG-TSON | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 205 A | ||
Package Type PG-TSON | ||
Mounting Type Surface Mount | ||
The Infineon OptiMOS power-MOSFET is best-in-class power MOSFET optimizes the end user experience by challenging the status quo in power density and form factor. One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling a more ergonomic design. Moving the inverter from the handle into the head minimizes the volume of the power tool motor housing while simultaneously keeping the torque of the tool at a reasonably high level for quick and easy action.
superior thermal performance in RthJC
Optimized layout possibilities
Standard and centre-gate footprint
High current capability
More efficient use of PCB area
Highest power density and performance
Optimized footprint for MOSFET parallelization with Centre-Gate
Optimized layout possibilities
Standard and centre-gate footprint
High current capability
More efficient use of PCB area
Highest power density and performance
Optimized footprint for MOSFET parallelization with Centre-Gate
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