Infineon IPD Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S412ATMA1

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£1.77

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£2.124

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18£0.885£1.77
20 - 48£0.77£1.54
50 - 98£0.725£1.45
100 - 198£0.675£1.35
200 +£0.625£1.25

*price indicative

Packaging Options:
RS Stock No.:
258-3849
Mfr. Part No.:
IPD60N10S412ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

26nC

Maximum Power Dissipation Pd

94W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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