MPN

Infineon IPD Type P-Channel MOSFET, 70 A, 30 V N TO-252 IPD068P03L3GATMA1

RS Stock No.:: 258-3831
Mfr. Part No.:: IPD068P03L3GATMA1
Brand:: Infineon

Infineon IPD Type P-Channel MOSFET, 70 A, 30 V N TO-252 IPD068P03L3GATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£3.00

(exc. VAT)

£3.60

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 1,645 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£0.60	£3.00
50 - 120	£0.546	£2.73
125 - 245	£0.51	£2.55
250 - 495	£0.48	£2.40
500 +	£0.444	£2.22

*price indicative

RS Stock No.:: 258-3831
Mfr. Part No.:: IPD068P03L3GATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	30V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	3.6mΩ
	Channel Mode	N
	Forward Voltage Vf	1.2V
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 30V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Maximum Drain Source Resistance Rds 3.6mΩ
	Channel Mode N
	Forward Voltage Vf 1.2V
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD068P03L3GATMA1

The Infineon P-channel enhancement mode field-effect transistor is highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Enhancement mode

Logic level

Avalanche rated

Fast switching

Dv/dt rated