Infineon iPB Type N-Channel MOSFET, 211 A, 650 V N TO-263 IPBE65R050CFD7AATMA1

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Subtotal (1 unit)*

£6.05

(exc. VAT)

£7.26

(inc. VAT)

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  • Plus 814 unit(s) shipping from 01 June 2026
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Units
Per unit
1 - 9£6.05
10 - 24£5.75
25 - 49£5.51
50 - 99£5.26
100 +£4.90

*price indicative

Packaging Options:
RS Stock No.:
258-3827
Mfr. Part No.:
IPBE65R050CFD7AATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

211A

Maximum Drain Source Voltage Vds

650V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.

Best-in-class quality and reliability

Higher breakdown voltage

High peak current capability

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