Infineon N-Channel MOSFET, 260 A, 80 V PG-TO263-7 IPB015N08N5ATMA1
- RS Stock No.:
- 258-3783
- Mfr. Part No.:
- IPB015N08N5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£3,040.00
(exc. VAT)
£3,650.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
1000 + | £3.04 | £3,040.00 |
*price indicative
- RS Stock No.:
- 258-3783
- Mfr. Part No.:
- IPB015N08N5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 260 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | PG-TO263-7 | |
Mounting Type | Surface Mount | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 260 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PG-TO263-7 | ||
Mounting Type Surface Mount | ||
The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Less paralleling required
Increased power density
Low voltage overshoot
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