Infineon MOSFET, 66 A, 650 V PG-TO 220 IPAN60R125PFD7SXKSA1

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Subtotal (1 pack of 2 units)*

£4.30

(exc. VAT)

£5.16

(inc. VAT)

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  • 999,999,998 unit(s) shipping from 05 February 2026
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Per unit
Per Pack*
2 - 18£2.15£4.30
20 - 48£1.935£3.87
50 - 98£1.805£3.61
100 - 198£1.675£3.35
200 +£1.57£3.14

*price indicative

Packaging Options:
RS Stock No.:
258-3780
Mfr. Part No.:
IPAN60R125PFD7SXKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Drain Current

66 A

Maximum Drain Source Voltage

650 V

Package Type

PG-TO 220

Mounting Type

Surface Mount

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The MOSFET in a TO-220 FullPAK narrow-lead package features RDS(on) of 125mOhm leading to low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Wide range of RDS(on) values
Excellent commutation ruggedness
Low EMI
Broad package portfolio
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning


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