MPN

Infineon BSZ Type N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON BSZ037N06LS5ATMA1

RS Stock No.:: 258-0712
Mfr. Part No.:: BSZ037N06LS5ATMA1
Brand:: Infineon

Infineon BSZ Type N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON BSZ037N06LS5ATMA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£3.58

(exc. VAT)

£4.30

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

4,900 unit(s) ready to ship

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Units	Per unit	Per Pack*
2 - 18	£1.79	£3.58
20 - 48	£1.445	£2.89
50 - 98	£1.355	£2.71
100 - 198	£1.275	£2.55
200 +	£1.185	£2.37

*price indicative

RS Stock No.:: 258-0712
Mfr. Part No.:: BSZ037N06LS5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	104A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TSDSON
	Series	BSZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.3mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.8V
	Maximum Power Dissipation Pd	69W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 61249-2-21, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 104A
	Maximum Drain Source Voltage Vds 60V
	Package Type TSDSON
	Series BSZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.3mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.8V
	Maximum Power Dissipation Pd 69W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 61249-2-21, RoHS
	Automotive Standard No

Datasheet - BSZ037N06LS5ATMA1

The Infineon OptiMOS 5 60V power MOSFET comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies, for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm2 combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.

Monolithically integrated Schottky-like diode

Ultra low charges

Ideal for high performance applications

RoHS compliant - halogen free

Less paralleling required

Very low voltage overshoot

Reduced need for snubber circuit