MPN

Infineon BSZ Type N-Channel MOSFET, 158 A, 40 V N, 8-Pin TSDSON BSZ018N04LS6ATMA1

RS Stock No.:: 258-0710
Mfr. Part No.:: BSZ018N04LS6ATMA1
Brand:: Infineon

Infineon BSZ Type N-Channel MOSFET, 158 A, 40 V N, 8-Pin TSDSON BSZ018N04LS6ATMA1

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Subtotal (1 pack of 2 units)*

£2.80

(exc. VAT)

£3.36

(inc. VAT)

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In Stock

4,780 unit(s) ready to ship

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Units	Per unit	Per Pack*
2 - 18	£1.40	£2.80
20 - 48	£1.25	£2.50
50 - 98	£1.16	£2.32
100 - 198	£1.09	£2.18
200 +	£1.01	£2.02

*price indicative

RS Stock No.:: 258-0710
Mfr. Part No.:: BSZ018N04LS6ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	158A
	Maximum Drain Source Voltage Vds	40V
	Series	BSZ
	Package Type	TSDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.7mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.78V
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 61249-2-21, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 158A
	Maximum Drain Source Voltage Vds 40V
	Series BSZ
	Package Type TSDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.7mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.78V
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 61249-2-21, RoHS
	Automotive Standard No

Datasheet - BSZ018N04LS6ATMA1

The Infineon OptiMOS 6 power MOSFET 40V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.

Highest system efficiency

Less paralleling required

Increased power density

Very low voltage overshoot