Vishay Type P-Channel MOSFET, 10.6 A, 30 V, 6-Pin PowerPAK SIA483ADJ-T1-GE3
- RS Stock No.:
- 256-7405
- Mfr. Part No.:
- SIA483ADJ-T1-GE3
- Brand:
- Vishay
Subtotal (1 pack of 25 units)*
£5.75
(exc. VAT)
£7.00
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 5,975 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 + | £0.23 | £5.75 |
*price indicative
- RS Stock No.:
- 256-7405
- Mfr. Part No.:
- SIA483ADJ-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 17.9W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 17.9W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Automotive Standard No | ||
The Vishay Semiconductor P-channel 30 V (D-S) mosfet iTime is thermally enhanced powerPAK SC-70 package provides excellent RDS-Qg figure-of-merit (FOM)
for switching applications battery charging and management, load switch, DC, DC converters, power management in battery-operated, mobile and wearable devices.
TrenchFET gen IV p-channel power mosfet
Provides excellent RDS-Qg figure-of-merit
For switching applications
100 % Rg tested
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