Vishay SQJQ186ER Type N-Channel MOSFET, 329 A, 30 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ186ER-T1_GE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

£15.04

(exc. VAT)

£18.05

(inc. VAT)

Add to Basket
Select or type quantity
Limited stock
  • Plus 1,970 left, shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 20£3.008£15.04
25 - 45£2.828£14.14
50 - 120£2.556£12.78
125 - 245£2.406£12.03
250 +£2.256£11.28

*price indicative

Packaging Options:
RS Stock No.:
252-0314
Mfr. Part No.:
SQJQ186ER-T1_GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

329A

Maximum Drain Source Voltage Vds

30V

Series

SQJQ186ER

Package Type

PowerPAK (8x8LR)

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0014mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

43nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

214W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Height

1.6mm

Width

4.9 mm

Standards/Approvals

AEC-Q101

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Thin 1.9 mm height

Related links