Vishay SiS4608DN Type N-Channel MOSFET, 35.7 A, 60 V Depletion, 8-Pin PowerPAK 1212-8

View all MOSFETs

Subtotal (1 reel of 3000 units)*

£783.00

(exc. VAT)

£939.00

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 6,000 unit(s), ready to ship
Units
Per unit
Per Reel*
3000 +£0.261£783.00

*price indicative

RS Stock No.:
252-0286
Mfr. Part No.:
SIS4608DN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35.7A

Maximum Drain Source Voltage Vds

60V

Series

SiS4608DN

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

14.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

33.7W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Length

3.3mm

Height

3.3mm

Standards/Approvals

No

Width

3.3 mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

Related links