Infineon BSS Type P-Channel MOSFET, 0.23 A, 30 V Enhancement, 3-Pin SOT-23 BSS306NH6327XTSA1

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£1.66

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£1.99

(inc. VAT)

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10 - 90£0.166£1.66
100 - 240£0.157£1.57
250 - 490£0.151£1.51
500 - 990£0.144£1.44
1000 +£0.117£1.17

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Packaging Options:
RS Stock No.:
250-0556
Mfr. Part No.:
BSS306NH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.23A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

BSS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Distrelec Product Id

304-40-501

The Infineon makes N-channel Enhancement mode small signal MOSFET transistor widely used in high-switching applications. It is avalanche rated and halogen-free. This device is OptiMOS 2, Small-Signal-Transistor. The logic level (4.5V rated) and Avalanche rated. It is 100% lead-free and Halogen free.

N-channel, Enhancement mode

Logic level 4.5V rated

Maximum power dissipation is 500mW

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