Infineon BSP Type P-Channel MOSFET, 680 mA, -100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1
- RS Stock No.:
- 250-0536
- Distrelec Article No.:
- 304-40-496
- Mfr. Part No.:
- BSP316PH6327XTSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
£4.65
(exc. VAT)
£5.60
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 910 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.93 | £4.65 |
| 50 - 120 | £0.816 | £4.08 |
| 125 - 245 | £0.764 | £3.82 |
| 250 - 495 | £0.708 | £3.54 |
| 500 + | £0.66 | £3.30 |
*price indicative
- RS Stock No.:
- 250-0536
- Distrelec Article No.:
- 304-40-496
- Mfr. Part No.:
- BSP316PH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | -100V | |
| Package Type | SOT-223 | |
| Series | BSP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1800mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds -100V | ||
Package Type SOT-223 | ||
Series BSP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1800mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes this SIPMOS, Small-Signal-Transistor P-Channel, Enhancement mode mosfet. The device is dv/dt rated, P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.
Vds is 100 V, RDS(on) 1.8 Ω and Id is 0.68 A
Maximum power dissipation is 360 mW
Related links
- Infineon BSP N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 ISP98DP10LMXTSA1
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223 ISP25DP06NMXTSA1
- Infineon ISP Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223