Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Enhancement, 3-Pin SOT-223
- RS Stock No.:
- 250-0527
- Mfr. Part No.:
- BSP125H6433XTMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 4000 units)*
£772.00
(exc. VAT)
£928.00
(inc. VAT)
FREE delivery for orders over £60.00
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- Shipping from 28 September 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | £0.193 | £772.00 |
| 8000 + | £0.183 | £732.00 |
*price indicative
- RS Stock No.:
- 250-0527
- Mfr. Part No.:
- BSP125H6433XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-223 | |
| Series | BSP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-223 | ||
Series BSP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Small Signal n-channel products are suitable for automotive applications. This SIPMOS Power-Transistor is an N-Channel, Enhancement mode with Vds of 600 V, Rds(on) 45 Ω and Id is 0.12 A. It is dv/dt rated.
Pb-free lead plating
Maximum power dissipation is 360mW
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