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Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON IAUC41N06S5N102ATMA1

RS Stock No.:: 249-8629
Mfr. Part No.:: IAUC41N06S5N102ATMA1
Brand:: Infineon

Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON IAUC41N06S5N102ATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£4.41

(exc. VAT)

£5.29

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 5,000 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
5 - 45	£0.882	£4.41
50 - 120	£0.778	£3.89
125 - 245	£0.722	£3.61
250 - 495	£0.672	£3.36
500 +	£0.628	£3.14

*price indicative

RS Stock No.:: 249-8629
Mfr. Part No.:: IAUC41N06S5N102ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TDSON
	Series	IAUC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 40V
	Package Type TDSON
	Series IAUC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IAUC41N06S5N102ATMA1

The Infineon 60V, N-Ch, 10.2 mohm, Automotive MOSFET with OptiMOS 5 technology for 60V MOSFETs in the industry standard S3O8 5 mm x 6 mm small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses.

OptiMOS power MOSFET for automotive applications

N-channel, Enhancement mode, Normal Level

Extended qualification beyond AEC-Q101

Enhanced electrical testing

Robust design

MSL1 up to 260°C peak reflow

175°C operating temperature

Green product (RoHS compliant)

100 percent Avalanche tested