Infineon iPB Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-263 IPB80N08S2L07ATMA1

RS Stock No.:: 249-6906
Mfr. Part No.:: IPB80N08S2L07ATMA1
Brand:: Infineon

Infineon iPB Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-263 IPB80N08S2L07ATMA1

Bulk discount available

Subtotal (1 unit)*

£4.32

(exc. VAT)

£5.18

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,998 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 9	£4.32
10 - 24	£4.10
25 - 49	£3.93
50 - 99	£3.76
100 +	£3.50

*price indicative

RS Stock No.:: 249-6906
Mfr. Part No.:: IPB80N08S2L07ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	75V
	Package Type	TO-263
	Series	iPB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 75V
	Package Type TO-263
	Series iPB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPB80N08S2L07ATMA1

75V, N-Ch, 6.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

Summary of Features

•N-channel Logic Level - Enhancement mode

•Automotive AEC Q101 qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package (lead free)

•Ultra low Rds(on)

•100% Avalanche tested

Benefits

•world's lowest RDS at 75V (on) in planar technology

•highest current capability

•lowest switching and conduction power losses for highest thermal efficiency

•robust packages with superior quality and reliability

•Optimized total gate charge enables smaller driver output stages

Potential Applications

•Valves control

•Solenoids control

•Lighting

•Single-ended motors

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today