STMicroelectronics STD Type N-Channel MOSFET, 80 A, 35 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 249-6745P
- Mfr. Part No.:
- STD80N240K6
- Brand:
- STMicroelectronics
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Subtotal 5 units (supplied on a continuous strip)*
£19.05
(exc. VAT)
£22.85
(inc. VAT)
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Units | Per unit |
|---|---|
| 5 - 9 | £3.81 |
| 10 - 24 | £3.43 |
| 25 - 49 | £3.09 |
| 50 + | £2.94 |
*price indicative
- RS Stock No.:
- 249-6745P
- Mfr. Part No.:
- STD80N240K6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 35V | |
| Package Type | TO-252 | |
| Series | STD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Standards/Approvals | UL | |
| Length | 10.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 35V | ||
Package Type TO-252 | ||
Series STD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Standards/Approvals UL | ||
Length 10.1mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics is very high voltage N-channel Power MOSFET is designed using the ultimate mesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Worldwide best RDS(on) x area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected