Infineon N-Channel MOSFET, 33 A, 650 V, 7-Pin D2PAK IMBG65R072M1HXTMA1
- RS Stock No.:
- 248-9320
- Mfr. Part No.:
- IMBG65R072M1HXTMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£2,680.00
(exc. VAT)
£3,220.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 10 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £2.68 | £2,680.00 |
*price indicative
- RS Stock No.:
- 248-9320
- Mfr. Part No.:
- IMBG65R072M1HXTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 33 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-263-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-263-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Number of Elements per Chip 1 | ||
The Infineon SiC MOSFET is a 650 V CoolSiC is built over the solid silicon carbide technology, leveraging the wide bandgap SiC material characteristics, the 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use, suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qf
Superior gate oxide reliability
Tj,max-175°C and excellent thermal behaviour
Lower RDS(on) and pulse current dependency on temperature
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides upto 4 times lower switching losses
Commutation robust fast body diode with low Qf
Superior gate oxide reliability
Tj,max-175°C and excellent thermal behaviour
Lower RDS(on) and pulse current dependency on temperature
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides upto 4 times lower switching losses
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