Diodes Inc Dual N-Channel MOSFET, 9 A, 20 V, 6-Pin U-DFN2030 DMN2014LHAB-13
- RS Stock No.:
- 246-7508
- Mfr. Part No.:
- DMN2014LHAB-13
- Brand:
- DiodesZetex
Subtotal (1 pack of 25 units)*
£3.375
(exc. VAT)
£4.05
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 9,950 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
25 + | £0.135 | £3.38 |
*price indicative
- RS Stock No.:
- 246-7508
- Mfr. Part No.:
- DMN2014LHAB-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 9 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | U-DFN2030 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 0.028 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1.1V | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type U-DFN2030 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 0.028 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Number of Elements per Chip 2 | ||
The DiodesZetex makes a new generation dual N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2030-6 packaging. It offers fast switching and high efficiency. It has working temperature range of -55°C to +150°C. It offers low input capacitance and fast switching speed.
Maximum drain to source voltage is 20 V and maximum gate to source voltage is ±16 V It offers low on-resistance and low gate threshold voltage ESD protected gate
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