Diodes Inc N-Channel MOSFET, 12.1 A, 60 V, 8-Pin SOIC DMT68M8LSS-13
- RS Stock No.:
- 246-6889
- Mfr. Part No.:
- DMT68M8LSS-13
- Brand:
- DiodesZetex
Subtotal (1 reel of 2500 units)*
£522.50
(exc. VAT)
£627.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,997,500 unit(s) shipping from 02 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.209 | £522.50 |
*price indicative
- RS Stock No.:
- 246-6889
- Mfr. Part No.:
- DMT68M8LSS-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 12.1 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.012 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 12.1 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.012 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 60 V Maximum gate to source voltage is ±20 V It offers low on-resistance It has low gate threshold voltage It offers an ESD protected gate
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