ROHM N-Channel MOSFET, 80 A, 1200 V Tray BSM080D12P2C008

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Subtotal (1 box of 12 units)*

£3,284.184

(exc. VAT)

£3,941.016

(inc. VAT)

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  • 999,999,996 unit(s) shipping from 07 April 2026
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Units
Per unit
Per Box*
12 +£273.682£3,284.18

*price indicative

RS Stock No.:
246-1500
Mfr. Part No.:
BSM080D12P2C008
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

1200 V

Package Type

Tray

Mounting Type

Screw Mount

SiC Power Modules, ROHM


The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.


MOSFET Transistors, ROHM Semiconductor

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