N-Channel MOSFET, 80 A, 1200 V Tray ROHM BSM080D12P2C008

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

The ROHM BSM080D12P2C008 is a half bridge module consisting of Sic DMOSFET and Sic-SBD this power module offers low surge low switching loss high speed switching possible reduced temperature dependence the Sic half bridge power module is deal for applications such as motor drive inverter converter photovoltaics wind power generation induction heating equipment.

Low surge
Low switching loss
High speed switching possible
Reduced temperature dependence

MOSFET Transistors, ROHM Semiconductor