ROHM N-Channel MOSFET, 80 A, 1200 V Tray BSM080D12P2C008
- RS Stock No.:
- 246-1500
- Mfr. Part No.:
- BSM080D12P2C008
- Brand:
- ROHM
Subtotal (1 box of 12 units)*
£3,284.184
(exc. VAT)
£3,941.016
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 06 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Box* |
---|---|---|
12 + | £273.682 | £3,284.18 |
*price indicative
- RS Stock No.:
- 246-1500
- Mfr. Part No.:
- BSM080D12P2C008
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | ROHM | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 1200 V | |
Package Type | Tray | |
Mounting Type | Screw Mount | |
Select all | ||
---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type Tray | ||
Mounting Type Screw Mount | ||
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
MOSFET Transistors, ROHM Semiconductor
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