DiodesZetex DMN Type N-Channel MOSFET, 10.7 A, 12 V Enhancement, 10-Pin 4-DSN3015-10 DMN12M8UCA10-7
- RS Stock No.:
- 244-1915
- Mfr. Part No.:
- DMN12M8UCA10-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
£11.00
(exc. VAT)
£13.25
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,925 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | £0.44 | £11.00 |
| 50 - 475 | £0.432 | £10.80 |
| 500 - 975 | £0.31 | £7.75 |
| 1000 + | £0.302 | £7.55 |
*price indicative
- RS Stock No.:
- 244-1915
- Mfr. Part No.:
- DMN12M8UCA10-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | 4-DSN3015-10 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36.4nC | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.03mm | |
| Height | 0.16mm | |
| Width | 1.54 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type 4-DSN3015-10 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36.4nC | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Length 3.03mm | ||
Height 0.16mm | ||
Width 1.54 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to minimize the on state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications.
ESD protection of gate
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
Related links
- DiodesZetex DMN Type N-Channel MOSFET 12 V Enhancement, 10-Pin 4-DSN3015-10
- DiodesZetex DMN Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333-8 DMN6069SFVW-7
- DiodesZetex DMN Type N-Channel MOSFET 12 V Enhancement, 6-Pin UDFN
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 6-Pin UDFN
- DiodesZetex DMN Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333-8
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SC-89
- DiodesZetex DMN Type N-Channel MOSFET 45 V Enhancement, 6-Pin TSOT
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin X1-DFN