MPN

Infineon ISP Type P-Channel MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-223 ISP75DP06LMXTSA1

RS Stock No.:: 243-9279
Mfr. Part No.:: ISP75DP06LMXTSA1
Brand:: Infineon

Infineon ISP Type P-Channel MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-223 ISP75DP06LMXTSA1

Bulk discount available

Subtotal (1 pack of 10 units)*

£2.68

(exc. VAT)

£3.22

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 950 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
10 - 90	£0.268	£2.68
100 - 240	£0.254	£2.54
250 - 490	£0.244	£2.44
500 - 990	£0.233	£2.33
1000 +	£0.188	£1.88

*price indicative

RS Stock No.:: 243-9279
Mfr. Part No.:: ISP75DP06LMXTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.7A
	Maximum Drain Source Voltage Vds	60V
	Series	ISP
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.7A
	Maximum Drain Source Voltage Vds 60V
	Series ISP
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - ISP75DP06LMXTSA1

The Infineon P-Channel small signal transistor have Pb-free lead plating. The drain current and drain-source voltage of MOSFET is -1.1 A and -60V respectively. It has very low resistance value. The operating temperature is ranges from -55 °C to 150 °C.

Surface Mount technology

Logic level availability

Easy interface to Microcontroller Unit (MCU)

Fast switching

avalanche ruggedness