onsemi N-Channel MOSFET, 66 A, 650 V TO-247 NTHL045N065SC1

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Subtotal (1 tube of 450 units)*

£2,711.70

(exc. VAT)

£3,253.95

(inc. VAT)

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Units
Per unit
Per Tube*
450 +£6.026£2,711.70

*price indicative

RS Stock No.:
241-0743
Mfr. Part No.:
NTHL045N065SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

66 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L


The ON Semiconductor 650 V, 42 mΩ N-Channel silicon carbide MOSFET. Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

High Junction Temperature
High Speed Switching and Low Capacitance
Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A

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