Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE030N06NM5ATMA1
- RS Stock No.:
- 240-6632
- Mfr. Part No.:
- IQE030N06NM5ATMA1
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
£4.40
(exc. VAT)
£5.28
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 428 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | £2.20 | £4.40 |
*price indicative
- RS Stock No.:
- 240-6632
- Mfr. Part No.:
- IQE030N06NM5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | IQE | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 0.73V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series IQE | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 0.73V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOSTM 5 60V PQFN 3.3x3.3 Source-Down features 60 V and low RDS(on) of 3.0 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.
Improved PCB losses
Enabling highest power density and performance
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