Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE008N03LM5CGATMA1
- RS Stock No.:
- 240-6629
- Mfr. Part No.:
- IQE008N03LM5CGATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£3.34
(exc. VAT)
£4.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 460 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.67 | £3.34 |
| 20 - 48 | £1.505 | £3.01 |
| 50 - 98 | £1.405 | £2.81 |
| 100 - 198 | £1.30 | £2.60 |
| 200 + | £1.205 | £2.41 |
*price indicative
- RS Stock No.:
- 240-6629
- Mfr. Part No.:
- IQE008N03LM5CGATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | IQE | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 0.73V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series IQE | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 0.73V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOSTM 5 30V PQFN 3.3x3.3 Source-Down features 30 V and low RDS(on) of 0.85 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.
Improved PCB losses
Enabling highest power density and performance
Related links
- Infineon N-Channel MOSFET 30 V, 8-Pin PQFN 3 x 3 IQE008N03LM5CGATMA1
- Infineon N-Channel MOSFET 30 V, 8-Pin PQFN 3 x 3 IQE008N03LM5ATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 IAUZ30N06S5L140ATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S58R4ATMA1
- Infineon N-Channel MOSFET 80 V, 8-Pin PQFN 3 x 3 IQE050N08NM5ATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 IQE030N06NM5CGATMA1
- Infineon N-Channel MOSFET 25 V, 8-Pin PQFN 3 x 3 BSZ018NE2LSATMA1
- Infineon N-Channel MOSFET 100 V, 8-Pin PQFN 3 x 3 IQE065N10NM5CGATMA1