Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L SQJ186EP-T1_GE3

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Subtotal (1 pack of 10 units)*

£7.12

(exc. VAT)

£8.54

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90£0.712£7.12
100 - 240£0.669£6.69
250 - 490£0.605£6.05
500 - 990£0.569£5.69
1000 +£0.535£5.35

*price indicative

Packaging Options:
RS Stock No.:
239-8671
Mfr. Part No.:
SQJ186EP-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

410A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8L

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.02Ω

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

43nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

255W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Length

6.15mm

Width

4.9 mm

Automotive Standard

AEC-Q101

The Vishay SIDR is automotive N-Channel MOSFET which operates at 80 V and 175 °C temperature. This MOSFET used for high power density.

AEC-Q101 qualified

UIS tested

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