Microchip VP2206 Silicon P-Channel MOSFET, 643 mA, 60 V, 3-Pin TO-92 VP2206N3-G
- RS Stock No.:
- 239-5621
- Mfr. Part No.:
- VP2206N3-G
- Brand:
- Microchip
Bulk discount available
Subtotal (1 pack of 5 units)*
£10.50
(exc. VAT)
£12.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 20 unit(s) shipping from 13 October 2025
- Plus 10 unit(s) shipping from 13 October 2025
- Plus 515 unit(s) shipping from 20 October 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.10 | £10.50 |
| 50 - 95 | £1.738 | £8.69 |
| 100 - 245 | £1.576 | £7.88 |
| 250 - 495 | £1.544 | £7.72 |
| 500 + | £1.514 | £7.57 |
*price indicative
- RS Stock No.:
- 239-5621
- Mfr. Part No.:
- VP2206N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 643 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Series | VP2206 | |
| Package Type | TO-92 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type P | ||
Maximum Continuous Drain Current 643 mA | ||
Maximum Drain Source Voltage 60 V | ||
Series VP2206 | ||
Package Type TO-92 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Microchip VP2206 series are enhancement-mode (normally-off) transistors which utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. These vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
It has a Free from secondary breakdown
It has a Low power drive requirement
It offers an ease of paralleling, low CISS and fast switching speeds
It has high input impedance and high gain with excellent thermal stability
It has an integral source-to-drain diode
It has a Low power drive requirement
It offers an ease of paralleling, low CISS and fast switching speeds
It has high input impedance and high gain with excellent thermal stability
It has an integral source-to-drain diode
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