Microchip VP2206 Silicon P-Channel MOSFET, 643 mA, 60 V, 3-Pin TO-92 VP2206N3-G

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Packaging Options:
RS Stock No.:
239-5621
Mfr. Part No.:
VP2206N3-G
Brand:
Microchip
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Brand

Microchip

Channel Type

P

Maximum Continuous Drain Current

643 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Series

VP2206

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Silicon

The Microchip VP2206 series are enhancement-mode (normally-off) transistors which utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. These vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

It has a Free from secondary breakdown
It has a Low power drive requirement
It offers an ease of paralleling, low CISS and fast switching speeds
It has high input impedance and high gain with excellent thermal stability
It has an integral source-to-drain diode

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