Toshiba Silicon N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 SSM3K329R,LF(T
- RS Stock No.:
- 236-3575P
- Mfr. Part No.:
- SSM3K329R,LF(T
- Brand:
- Toshiba
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£12.90
(exc. VAT)
£15.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 36,000 unit(s) shipping from 18 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 200 | £0.129 |
| 250 - 450 | £0.127 |
| 500 - 950 | £0.124 |
| 1000 + | £0.116 |
*price indicative
- RS Stock No.:
- 236-3575P
- Mfr. Part No.:
- SSM3K329R,LF(T
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.89e+008 Ω | |
| Maximum Gate Threshold Voltage | 1V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.89e+008 Ω | ||
Maximum Gate Threshold Voltage 1V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in power management switching and high speed switching applications.
Storage temperature range −55 to 150 °C