Infineon Silicon N-Channel MOSFET Transistor, 440 A, 40 V, 5-Pin HSOF-5 IST007N04NM6AUMA1
- RS Stock No.:
- 235-0607
- Mfr. Part No.:
- IST007N04NM6AUMA1
- Brand:
- Infineon
Subtotal (1 reel of 2000 units)*
£2,740.00
(exc. VAT)
£3,280.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2000 + | £1.37 | £2,740.00 |
*price indicative
- RS Stock No.:
- 235-0607
- Mfr. Part No.:
- IST007N04NM6AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 440 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | HSOF-5 | |
Mounting Type | Surface Mount | |
Pin Count | 5 | |
Maximum Drain Source Resistance | 0.0007 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.3V | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 440 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type HSOF-5 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 0.0007 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.3V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOSTM6 power transistor operated on 40V and drain current of 440A.It is in Stoll package features very low RDS(on) of 0.70mOhm. It has the advantages of Infineons well-known quality level for robust industry packages making it the ideal solution for various performance in battery powered applications, battery protection and battery formation.
Optimized for low voltage motor drives application
Optimized for battery power applications
Very low on-resistance RDS(on)
100% avalanche tested
Superior thermal performance
N-channel
Optimized for battery power applications
Very low on-resistance RDS(on)
100% avalanche tested
Superior thermal performance
N-channel
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