Infineon F4 Quad SiC N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2B F445MR12W1M1B76BPSA1

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Subtotal (1 unit)*

£102.30

(exc. VAT)

£122.76

(inc. VAT)

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Units
Per unit
1 - 1£102.30
2 - 4£100.26
5 +£90.24

*price indicative

Packaging Options:
RS Stock No.:
234-8968
Mfr. Part No.:
F445MR12W1M1B76BPSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

1200 V

Series

F4

Package Type

AG-EASY2B

Mounting Type

Screw Mount

Maximum Drain Source Resistance

0.045 Ω

Maximum Gate Threshold Voltage

5.55V

Transistor Material

SiC

Number of Elements per Chip

4

The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 75A continuous drain current.

Chassis mount
-40°C to 150°C operating temperature

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