Infineon Isolated F4 Type N-Channel MOSFET, 25 A, 1200 V, 2-Pin AG-EASY2B F445MR12W1M1B76BPSA1

Bulk discount available

Subtotal (1 unit)*

£102.30

(exc. VAT)

£122.76

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 29 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1£102.30
2 - 4£100.26
5 +£90.24

*price indicative

Packaging Options:
RS Stock No.:
234-8968
Mfr. Part No.:
F445MR12W1M1B76BPSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

1200V

Series

F4

Package Type

AG-EASY2B

Pin Count

2

Maximum Drain Source Resistance Rds

45mΩ

Typical Gate Charge Qg @ Vgs

0.062μC

Maximum Gate Source Voltage Vgs

15 V

Maximum Power Dissipation Pd

20mW

Minimum Operating Temperature

-40°C

Forward Voltage Vf

5.65V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

16.4mm

Length

62.8mm

Width

33.8 mm

Standards/Approvals

60749 and 60068, IEC 60747

Automotive Standard

No

The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 75A continuous drain current.

Chassis mount

-40°C to 150°C operating temperature

Related links