Renesas Electronics BEAM Type N-Channel MOSFET, 50 A, 30 V Enhancement, 8-Pin WPAK RJK0391DPA-00#J5A

Bulk discount available

Subtotal 50 units (supplied on a continuous strip)*

£52.40

(exc. VAT)

£62.90

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 2,940 unit(s), ready to ship
Units
Per unit
50 - 95£1.048
100 - 245£0.896
250 - 995£0.878
1000 +£0.61

*price indicative

Packaging Options:
RS Stock No.:
234-7153P
Mfr. Part No.:
RJK0391DPA-00#J5A
Brand:
Renesas Electronics
Find similar products by selecting one or more attributes.
Select all

Brand

Renesas Electronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

30V

Package Type

WPAK

Series

BEAM

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0029Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

Pb-Free, Halogen-Free

Length

6.1mm

Width

5.9 mm

Height

0.85mm

Automotive Standard

No

The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 30 V. It is capable of 4.5 V gate drive.

High speed switching

Low drive current

High density mounting

Low on-resistance

Pb-free

Halogen-free