Renesas Silicon N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-3PN 2SK1835-E
- RS Stock No.:
- 234-7061
- Mfr. Part No.:
- 2SK1835-E
- Brand:
- Renesas Electronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 234-7061
- Mfr. Part No.:
- 2SK1835-E
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 1500 V | |
| Package Type | TO-3PN | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.6 Ω | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 1500 V | ||
Package Type TO-3PN | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.6 Ω | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Renesas Electronics silicon N-channel MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 1500 V. It is also suitable for switching regulator.
Low on-resistance
High-speed switching
High-robustness
Low drive current
No secondary breakdown
High-speed switching
High-robustness
Low drive current
No secondary breakdown
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