Infineon OptiMOS™ 3 N-Channel MOSFET, 108 A, 200 V, 8-Pin PG HSOG-8 (TOLG) IPTG111N20NM3FDATMA1

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£11.18

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£13.42

(inc. VAT)

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Packaging Options:
RS Stock No.:
233-4389
Mfr. Part No.:
IPTG111N20NM3FDATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

108 A

Maximum Drain Source Voltage

200 V

Package Type

PG HSOG-8 (TOLG)

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The Infineon OptiMOS power MOSFET IPTG111N20NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 3 - 200 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI
High performance capability

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