STMicroelectronics STB37N60 SiC N-Channel MOSFET, 12 A, 1200 V, 3-Pin H2PAK-2 STH12N120K5-2

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Subtotal 10 units (supplied on a continuous strip)*

£92.90

(exc. VAT)

£111.50

(inc. VAT)

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Packaging Options:
RS Stock No.:
233-3041P
Mfr. Part No.:
STH12N120K5-2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1200 V

Series

STB37N60

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.69 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Worldwide best FOM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected

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