STMicroelectronics STB37N60 SiC N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK STB37N60DM2AG
- RS Stock No.:
- 233-3039P
- Mfr. Part No.:
- STB37N60DM2AG
- Brand:
- STMicroelectronics
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Subtotal 5 units (supplied on a continuous strip)*
£25.15
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£30.20
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In Stock
- 974 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 5 - 9 | £5.03 |
| 10 - 24 | £4.53 |
| 25 - 49 | £4.08 |
| 50 + | £3.86 |
*price indicative
- RS Stock No.:
- 233-3039P
- Mfr. Part No.:
- STB37N60DM2AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 28 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | D2PAK (TO-263) | |
| Series | STB37N60 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.094 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.9V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 28 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type D2PAK (TO-263) | ||
Series STB37N60 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.094 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected