Infineon OptiMOS 5 Type N-Channel MOSFET, 86 A, 60 V, 8-Pin PQFN ISZ0702NLSATMA1
- RS Stock No.:
- 232-6772
- Mfr. Part No.:
- ISZ0702NLSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£6.75
(exc. VAT)
£8.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 4,990 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.35 | £6.75 |
| 50 - 120 | £1.216 | £6.08 |
| 125 - 245 | £1.134 | £5.67 |
| 250 - 495 | £1.054 | £5.27 |
| 500 + | £0.97 | £4.85 |
*price indicative
- RS Stock No.:
- 232-6772
- Mfr. Part No.:
- ISZ0702NLSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 5 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.6mΩ | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 65W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.4mm | |
| Width | 1.1 mm | |
| Standards/Approvals | No | |
| Height | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 5 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.6mΩ | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 65W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 3.4mm | ||
Width 1.1 mm | ||
Standards/Approvals No | ||
Height 3.4mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 60 V, are designed targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
Related links
- Infineon OptiMOS™ 5 N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 ISZ0702NLSATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 IQE030N06NM5CGATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 IAUZ30N06S5L140ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 ISZ034N06LM5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 ISZ0703NLSATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 IQE030N06NM5ATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 FL BSZ039N06NSATMA1
- Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode 60 V, 8-Pin PQFN 3 x 3 BSZ100N06NSATMA1