STMicroelectronics SCTW MOSFET, 60 A, 1200 V, 4-Pin HiP247-4 SCTWA60N120G2-4
- RS Stock No.:
- 230-0094P
- Mfr. Part No.:
- SCTWA60N120G2-4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 2 units (supplied in a tube)*
£41.88
(exc. VAT)
£50.26
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 03 August 2026
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Units | Per unit |
|---|---|
| 2 - 4 | £20.94 |
| 5 + | £20.42 |
*price indicative
- RS Stock No.:
- 230-0094P
- Mfr. Part No.:
- SCTWA60N120G2-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | SCTW | |
| Package Type | HiP247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 5.2e+007 Ω | |
| Maximum Gate Threshold Voltage | 5V | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series SCTW | ||
Package Type HiP247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 5.2e+007 Ω | ||
Maximum Gate Threshold Voltage 5V | ||
The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency