STMicroelectronics RF2L MOSFET, 60 V, 2-Pin B2 RF2L36075CF2
- RS Stock No.:
- 230-0088P
- Mfr. Part No.:
- RF2L36075CF2
- Brand:
- STMicroelectronics
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Subtotal 2 units (supplied on a continuous strip)*
£221.68
(exc. VAT)
£266.02
(inc. VAT)
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In Stock
- 30 unit(s) ready to ship
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Units | Per unit |
---|---|
2 - 4 | £110.84 |
5 + | £108.10 |
*price indicative
- RS Stock No.:
- 230-0088P
- Mfr. Part No.:
- RF2L36075CF2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Drain Source Voltage | 60 V | |
Package Type | B2 | |
Series | RF2L | |
Mounting Type | Surface Mount | |
Pin Count | 2 | |
Maximum Drain Source Resistance | 1 Ω | |
Maximum Gate Threshold Voltage | 2.5V | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Drain Source Voltage 60 V | ||
Package Type B2 | ||
Series RF2L | ||
Mounting Type Surface Mount | ||
Pin Count 2 | ||
Maximum Drain Source Resistance 1 Ω | ||
Maximum Gate Threshold Voltage 2.5V | ||
The STMicroelectronics RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all typical cellular base station modulation formats.
High efficiency and linear gain operations
Integrated ESD protection
Internal input matching for ease of use
Large positive and negative gate-source voltage range for improved class C operation
Excellent thermal stability, low HCI drift
Integrated ESD protection
Internal input matching for ease of use
Large positive and negative gate-source voltage range for improved class C operation
Excellent thermal stability, low HCI drift