Infineon HEXFET Silicon N-Channel MOSFET, 36 A, 100 V, 3-Pin D2PAK AUIRF540ZSTRL
- RS Stock No.:
- 229-1730
- Mfr. Part No.:
- AUIRF540ZSTRL
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 229-1730
- Mfr. Part No.:
- AUIRF540ZSTRL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 36 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0265 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0265 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and wide variety of other applications.
It is lead free
It is RoHS compliant
It is RoHS compliant