STMicroelectronics N-Channel MOSFET, 46 A, 600 V, 8-Pin TO-LL Type A2 STO65N60DM6

View all MOSFETs

Subtotal 2 units (supplied on a continuous strip)*

£9.09

(exc. VAT)

£10.908

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 466 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
2 +£4.545

*price indicative

Packaging Options:
RS Stock No.:
228-3053P
Mfr. Part No.:
STO65N60DM6
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

600 V

Package Type

TO-LL Type A2

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.076 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin