Vishay TrenchFET Dual N-Channel MOSFET, 18 A, 60 V, 8-Pin PowerPAK 1212-8W SQS660CENW-T1_GE3
- RS Stock No.:
- 228-2966
- Mfr. Part No.:
- SQS660CENW-T1_GE3
- Brand:
- Vishay
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 228-2966
- Mfr. Part No.:
- SQS660CENW-T1_GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerPAK 1212-8W | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0112 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerPAK 1212-8W | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0112 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
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