Vishay TrenchFET Type N-Channel MOSFET, 350 A, 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ136ELP-T1_GE3
- RS Stock No.:
- 228-2953
- Mfr. Part No.:
- SQJ136ELP-T1_GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
£8.70
(exc. VAT)
£10.45
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.74 | £8.70 |
| 50 - 120 | £1.48 | £7.40 |
| 125 - 245 | £1.392 | £6.96 |
| 250 - 495 | £1.306 | £6.53 |
| 500 + | £1.134 | £5.67 |
*price indicative
- RS Stock No.:
- 228-2953
- Mfr. Part No.:
- SQJ136ELP-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK SO-8L | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 107nC | |
| Maximum Power Dissipation Pd | 500W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK SO-8L | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 107nC | ||
Maximum Power Dissipation Pd 500W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel 40 V power MOSFET.
100 % Rg and UIS tested
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