Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-263 SIHB5N80AE-GE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

£13.39

(exc. VAT)

£16.07

(inc. VAT)

Add to Basket
Select or type quantity
Being discontinued
  • Final 960 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 90£1.339£13.39
100 - 240£1.287£12.87
250 - 490£1.138£11.38
500 - 990£1.073£10.73
1000 +£1.004£10.04

*price indicative

Packaging Options:
RS Stock No.:
225-9912
Mfr. Part No.:
SIHB5N80AE-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.3Ω

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16.5nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

62.5W

Maximum Operating Temperature

150°C

Width

9.65 mm

Standards/Approvals

No

Length

10.67mm

Height

15.88mm

Automotive Standard

No

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

Related links