STMicroelectronics Dual N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK STD9N60M6
- RS Stock No.:
- 225-0672P
- Mfr. Part No.:
- STD9N60M6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£32.64
(exc. VAT)
£39.16
(inc. VAT)
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In Stock
- Plus 2,490 unit(s) shipping from 06 October 2025
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Units | Per unit |
---|---|
20 - 90 | £1.632 |
100 - 240 | £1.507 |
250 - 490 | £1.397 |
500 + | £1.36 |
*price indicative
- RS Stock No.:
- 225-0672P
- Mfr. Part No.:
- STD9N60M6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 6 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.75 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.75V | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.75 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.75V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
The STMicroelectronics new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
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