Infineon CoolMOS™ P7 N-Channel MOSFET, 6 A, 700 V, 3-Pin IPAK IPS70R900P7SAKMA1
- RS Stock No.:
- 222-4935
- Mfr. Part No.:
- IPS70R900P7SAKMA1
- Brand:
- Infineon
Subtotal (1 tube of 75 units)*
£23.55
(exc. VAT)
£28.275
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 675 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
75 + | £0.314 | £23.55 |
*price indicative
- RS Stock No.:
- 222-4935
- Mfr. Part No.:
- IPS70R900P7SAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 6 A | |
Maximum Drain Source Voltage | 700 V | |
Package Type | IPAK SL (TO-251 SL) | |
Series | CoolMOS™ P7 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 900 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type IPAK SL (TO-251 SL) | ||
Series CoolMOS™ P7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 900 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon developed to serve todays and especially tomorrows trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Related links
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