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Infineon HEXFET Silicon N-Channel MOSFET, 68 A, 25 V DirectFET ISOMETRIC IRF6712STRPBF

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Subtotal (1 pack of 10 units)*

£9.90

(exc. VAT)

£11.90

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40£0.99£9.90
50 - 90£0.941£9.41
100 - 240£0.847£8.47
250 - 490£0.762£7.62
500 +£0.723£7.23

*price indicative

Packaging Options:
RS Stock No.:
222-4741
Mfr. Part No.:
IRF6712STRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

25 V

Series

HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

0.0087 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

100% Rg tested Low Conduction and Switching Losses
Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters