Infineon HEXFET Silicon N-Channel MOSFET, 68 A, 25 V DirectFET ISOMETRIC IRF6712STRPBF
- RS Stock No.:
- 222-4740
- Mfr. Part No.:
- IRF6712STRPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 222-4740
- Mfr. Part No.:
- IRF6712STRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 68 A | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | DirectFET ISOMETRIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Maximum Drain Source Resistance | 0.0087 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 68 A | ||
Maximum Drain Source Voltage 25 V | ||
Package Type DirectFET ISOMETRIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 0.0087 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
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