Infineon CoolMOS Silicon N-Channel MOSFET, 12.7 A, 700 V, 3-Pin SOT-223 IPN70R1K0CEATMA1
- RS Stock No.:
- 222-4685
- Mfr. Part No.:
- IPN70R1K0CEATMA1
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 222-4685
- Mfr. Part No.:
- IPN70R1K0CEATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12.7 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | SOT-223 | |
| Series | CoolMOS | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 12.7 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type SOT-223 | ||
Series CoolMOS | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
